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TRANSIENT PHENOMENA IN CAPACITANCE AND REVERSE CURRENT IN A GAAS SCHOTTKY BARRIER DIODE
被引:28
作者
:
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1967年
/ 6卷
/ 01期
关键词
:
D O I
:
10.1143/JJAP.6.13
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:13 / +
页数:1
相关论文
共 6 条
[1]
SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES
CROWELL, CR
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h-index:
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CROWELL, CR
SHORE, HB
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h-index:
0
SHORE, HB
LABATE, EE
论文数:
0
引用数:
0
h-index:
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LABATE, EE
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
: 3843
-
&
[2]
LEAKAGE CURRENT IN ZINC-DIFFUSED GAAS DIODES
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
AOKI, T
论文数:
0
引用数:
0
h-index:
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AOKI, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(05)
: 362
-
&
[3]
TRANSIENT PHENOMENA IN CAPACITANCE OF GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(09)
: 837
-
+
[4]
HENISH HK, 1957, RECTIFYING SEMICONDU, P223
[5]
AU-N-TYPE GAAS SCHOTTKY BARRIER + ITS VARACTOR APPLICATION
KAHNG, D
论文数:
0
引用数:
0
h-index:
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KAHNG, D
[J].
BELL SYSTEM TECHNICAL JOURNAL,
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[6]
TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS
PANKOVE, JI
论文数:
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引用数:
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PANKOVE, JI
[J].
PHYSICAL REVIEW LETTERS,
1962,
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(07)
: 283
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←
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→
共 6 条
[1]
SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
SHORE, HB
论文数:
0
引用数:
0
h-index:
0
SHORE, HB
LABATE, EE
论文数:
0
引用数:
0
h-index:
0
LABATE, EE
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
: 3843
-
&
[2]
LEAKAGE CURRENT IN ZINC-DIFFUSED GAAS DIODES
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
AOKI, T
论文数:
0
引用数:
0
h-index:
0
AOKI, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(05)
: 362
-
&
[3]
TRANSIENT PHENOMENA IN CAPACITANCE OF GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(09)
: 837
-
+
[4]
HENISH HK, 1957, RECTIFYING SEMICONDU, P223
[5]
AU-N-TYPE GAAS SCHOTTKY BARRIER + ITS VARACTOR APPLICATION
KAHNG, D
论文数:
0
引用数:
0
h-index:
0
KAHNG, D
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1964,
43
(1P1):
: 215
-
+
[6]
TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS
PANKOVE, JI
论文数:
0
引用数:
0
h-index:
0
PANKOVE, JI
[J].
PHYSICAL REVIEW LETTERS,
1962,
9
(07)
: 283
-
&
←
1
→