FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS

被引：1143

作者：

PADOVANI, FA

STRATTON, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 07期

关键词：

D O I：

10.1016/0038-1101(66)90097-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：695 / &

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[4] METAL-SEMICONDUCTOR BARRIER-HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD-DEGENERATE 1-CARRIER SYSTEM
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[5] HENISH HK, 1957, RECTIFYING SEMICONDU
[6] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER
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[J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295
[7] ACCURATE SOLUTION OF AN IDEALIZED ONE-CARRIER METAL-SEMICONDUCTOR JUNCTION PROBLEM
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[J]. SOLID-STATE ELECTRONICS, 1962, 5 (JAN-F) : 11 - 37
[8] THERMIONIC EMISSION, FIELD EMISSION, AND THE TRANSITION REGION
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GOOD, RH
[J]. PHYSICAL REVIEW, 1956, 102 (06): : 1464 - 1473
[9] PADOVANI FA, TO BE PBULSIHED
[10] PADOVANI FA, TO BE PUBLSIHED