FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES

被引：55

作者：

BAYRAKTAROGLU, B ^{[1
]}

KOHN, E ^{[1
]}

HARTNAGEL, HL ^{[1
]}

机构：

[1] UNIV NEWCASTLE UPON TYNE,DEPT ELECT & ELECTR ENGN,MERZ COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND

来源：

ELECTRONICS LETTERS | 1976年 / 12卷 / 02期

关键词：

D O I：

10.1049/el:19760043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：53 / 54

页数：2

相关论文

共 4 条

[1] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569
[2] IMPROVED METHOD OF ANODIC-OXIDATION OF GAAS
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. ELECTRONICS LETTERS, 1975, 11 (03) : 53 - 54
[3] GAAS INVERSION-TYPE MIS TRANSISTORS
ITO, T
SAKAI, Y
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759
[4] NEW METHOD FOR PRODUCING IDEAL METAL-SEMICONDUCTOR OHMIC CONTACTS
SEBESTYEN, T
HARTNAGEL, H
HERRON, LH
[J]. ELECTRONICS LETTERS, 1974, 10 (18) : 372 - 373