ENHANCEMENT-MODE GAAS MOSFET ON SEMI-INSULATING SUBSTRATE USING A SELF-ALIGNED GATE TECHNIQUE

被引：21

作者：

KOHN, E ^{[1
]}

COLQUHOUN, A ^{[1
]}

机构：

[1] UNIV NEWCASTLE UPON TYNE,DEPT ELECT & ELECTR ENGN,NEWCASTLE TYNE NE1 7RU,NORTHUMBERLAND,ENGLAND

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 03期

关键词：

D O I：

10.1049/el:19770049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：73 / 74

页数：2

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