GAAS-MESFET FOR DIGITAL APPLICATION

[1] BACHAM KH, 1974, ECS M

[2] BENEKING H, 1974, DIGEST TECH PAPERS, P292

[3] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 835 - &

[4] SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION [J]. ELECTRONICS LETTERS, 1974, 10 (13) : 259 - 260

[5] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220

[6] JUTZI W, 1971, AEU-ARCH ELEKTRON UB, V25, P595

[7] KOHN E, 1975, NACHRICHTENTECH Z, V28, P287

[8] NORMALLY-OFF MESFET WITH FAST SWITCHING BEHAVIOR [J]. ELECTRONICS LETTERS, 1974, 10 (24) : 505 - 505

[9] HIGH-SPEED 1 MUM GAAS MESFET [J]. ELECTRONICS LETTERS, 1975, 11 (08) : 171 - 172

[10] KOHN E, 1975, THESIS I HALBLEITERT

[1] BACHAM KH, 1974, ECS M

[2] BENEKING H, 1974, DIGEST TECH PAPERS, P292

[3] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 835 - &

[4] SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION [J]. ELECTRONICS LETTERS, 1974, 10 (13) : 259 - 260

[5] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220

[6] JUTZI W, 1971, AEU-ARCH ELEKTRON UB, V25, P595

[7] KOHN E, 1975, NACHRICHTENTECH Z, V28, P287

[8] NORMALLY-OFF MESFET WITH FAST SWITCHING BEHAVIOR [J]. ELECTRONICS LETTERS, 1974, 10 (24) : 505 - 505

[9] HIGH-SPEED 1 MUM GAAS MESFET [J]. ELECTRONICS LETTERS, 1975, 11 (08) : 171 - 172

[10] KOHN E, 1975, THESIS I HALBLEITERT