VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS

被引：68

作者：

HEIME, K ^{[1
]}

KONIG, U ^{[1
]}

KOHN, E ^{[1
]}

WORTMANN, A ^{[1
]}

机构：

[1] RHEIN WESTFAL TH,INST HALBLEITER,SFB56,D-15 AACHEN,WEST GERMANY

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 08期

关键词：

D O I：

10.1016/0038-1101(74)90032-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：835 / &

共 8 条

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[4] SPECIFIC CONTACT RESISTANCE OF OHMIC CONTACTS TO GALLIUM-ARSENIDE [J].

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SOLID-STATE ELECTRONICS, 1972, 15 (04) :387-&

[5]

GOLDBERG YA, 1970, SOV PHYS SEMICOND+, V3, P1447

[6] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].

GYULAI, J ;

MAYER, JW ;

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YU, AYC ;

GOPEN, HJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3578-+

[7] CONTACT RESISTANCES OF SEVERAL METALS AND ALLOYS TO GAAS [J].

MATINO, H ;

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HERRICK, IW ;

ADAMS, MF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) :709-&

[8] METALLIC CONTACTS FOR GALLIUM ARSENIDE [J].

PAOLA, CR .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1189-+

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