SPECIFIC CONTACT RESISTANCE OF OHMIC CONTACTS TO GALLIUM-ARSENIDE

被引：49

作者：

EDWARDS, WD

TORRENS, AB

HARTMAN, WA

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 04期

关键词：

D O I：

10.1016/0038-1101(72)90109-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：387 / &

共 24 条

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[10] PULSED JBAND (12.4-18 GHZ) GUNN-EFFECT OSCILLATORS [J].

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