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ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS
被引:107
作者
:
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
RODRIGUEZ, V
论文数:
0
引用数:
0
h-index:
0
RODRIGUEZ, V
YU, AYC
论文数:
0
引用数:
0
h-index:
0
YU, AYC
GOPEN, HJ
论文数:
0
引用数:
0
h-index:
0
GOPEN, HJ
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1971年
/ 42卷
/ 09期
关键词
:
D O I
:
10.1063/1.1660773
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3578 / +
页数:1
相关论文
共 11 条
[1]
METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES
BRASLAU, N
论文数:
0
引用数:
0
h-index:
0
BRASLAU, N
GUNN, JB
论文数:
0
引用数:
0
h-index:
0
GUNN, JB
STAPLES, JL
论文数:
0
引用数:
0
h-index:
0
STAPLES, JL
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(05)
: 381
-
+
[2]
OHMIC CONTACTS FOR GAAS DEVICES
COX, RH
论文数:
0
引用数:
0
h-index:
0
COX, RH
STRACK, H
论文数:
0
引用数:
0
h-index:
0
STRACK, H
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(12)
: 1213
-
+
[3]
EVALUATION OF SILICON NITRIDE LAYERS OF VARIOUS COMPOSITION BY BACKSCATTERING AND CHANNELING-EFFECT MEASUREMENTS
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MEYER, O
论文数:
0
引用数:
0
h-index:
0
MEYER, O
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
RODRIGUEZ, V
论文数:
0
引用数:
0
h-index:
0
RODRIGUEZ, V
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(01)
: 451
-
+
[4]
ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MEYER, O
论文数:
0
引用数:
0
h-index:
0
MEYER, O
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
RODRIGUE.V
论文数:
0
引用数:
0
h-index:
0
RODRIGUE.V
[J].
APPLIED PHYSICS LETTERS,
1970,
16
(06)
: 232
-
&
[5]
OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
HARRIS, JS
NANNICHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
NANNICHI, Y
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
PEARSON, GL
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4575
-
&
[6]
MAYER JW, 1970, ION IMPLANTATION SEM, pCH4
[7]
ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
MEYER, O
论文数:
0
引用数:
0
h-index:
0
MEYER, O
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
[J].
SURFACE SCIENCE,
1970,
22
(02)
: 263
-
&
[8]
SCHOTTKY BARRIERS ON GAAS
MILLEA, MF
论文数:
0
引用数:
0
h-index:
0
机构:
Aerospace Corporation, El Segundo
MILLEA, MF
MCCOLL, M
论文数:
0
引用数:
0
h-index:
0
机构:
Aerospace Corporation, El Segundo
MCCOLL, M
[J].
PHYSICAL REVIEW,
1969,
177
(03):
: 1164
-
&
[9]
THERMIONIC EMISSION IN AU-GAAS SCHOTTKY BARRIERS
PADOVANI, FA
论文数:
0
引用数:
0
h-index:
0
PADOVANI, FA
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(02)
: 193
-
+
[10]
WHALING W, 1958, HANDB PHYSIK, V34, P193
←
1
2
→
共 11 条
[1]
METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES
BRASLAU, N
论文数:
0
引用数:
0
h-index:
0
BRASLAU, N
GUNN, JB
论文数:
0
引用数:
0
h-index:
0
GUNN, JB
STAPLES, JL
论文数:
0
引用数:
0
h-index:
0
STAPLES, JL
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(05)
: 381
-
+
[2]
OHMIC CONTACTS FOR GAAS DEVICES
COX, RH
论文数:
0
引用数:
0
h-index:
0
COX, RH
STRACK, H
论文数:
0
引用数:
0
h-index:
0
STRACK, H
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(12)
: 1213
-
+
[3]
EVALUATION OF SILICON NITRIDE LAYERS OF VARIOUS COMPOSITION BY BACKSCATTERING AND CHANNELING-EFFECT MEASUREMENTS
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MEYER, O
论文数:
0
引用数:
0
h-index:
0
MEYER, O
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
RODRIGUEZ, V
论文数:
0
引用数:
0
h-index:
0
RODRIGUEZ, V
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(01)
: 451
-
+
[4]
ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MEYER, O
论文数:
0
引用数:
0
h-index:
0
MEYER, O
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
RODRIGUE.V
论文数:
0
引用数:
0
h-index:
0
RODRIGUE.V
[J].
APPLIED PHYSICS LETTERS,
1970,
16
(06)
: 232
-
&
[5]
OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
HARRIS, JS
NANNICHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
NANNICHI, Y
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
PEARSON, GL
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4575
-
&
[6]
MAYER JW, 1970, ION IMPLANTATION SEM, pCH4
[7]
ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
MEYER, O
论文数:
0
引用数:
0
h-index:
0
MEYER, O
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
[J].
SURFACE SCIENCE,
1970,
22
(02)
: 263
-
&
[8]
SCHOTTKY BARRIERS ON GAAS
MILLEA, MF
论文数:
0
引用数:
0
h-index:
0
机构:
Aerospace Corporation, El Segundo
MILLEA, MF
MCCOLL, M
论文数:
0
引用数:
0
h-index:
0
机构:
Aerospace Corporation, El Segundo
MCCOLL, M
[J].
PHYSICAL REVIEW,
1969,
177
(03):
: 1164
-
&
[9]
THERMIONIC EMISSION IN AU-GAAS SCHOTTKY BARRIERS
PADOVANI, FA
论文数:
0
引用数:
0
h-index:
0
PADOVANI, FA
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(02)
: 193
-
+
[10]
WHALING W, 1958, HANDB PHYSIK, V34, P193
←
1
2
→