EVALUATION OF SILICON NITRIDE LAYERS OF VARIOUS COMPOSITION BY BACKSCATTERING AND CHANNELING-EFFECT MEASUREMENTS

被引：39

作者：

GYULAI, J

MEYER, O

MAYER, JW

RODRIGUEZ, V

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.1659622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：451 / +

页数：1

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[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
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[2] A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE
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[4] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES
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[5] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE
ERIKSSON, L
DAVIES, JA
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MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +
[6] ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
GYULAI, J
MEYER, O
MAYER, JW
RODRIGUE.V
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (06) : 232 - &
[7] HU SM, 1966, J ELECTROCHEM SOC, V113, P165
[8] MEYER O, TO BE PUBLISHED
[9] RODRIGUEZ V, UNPUBLISHED
[10] RODRIGUEZ V, TO BE PUBLISHED