IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE

被引：118

作者：

ERIKSSON, L

DAVIES, JA

JOHANSSON, NG

MAYER, JW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 02期

关键词：

D O I：

10.1063/1.1657473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：842 / +

页数：1

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