EVIDENCE FOR DAMAGE REGIONS IN SI GAAS AND INSB SEMICONDUCTORS BOMBARDED WITH HIGH-ENERGY NEUTRONS

被引：33

作者：

BERTOLOTTI, M

PAPA, T

SETTE, D

VITALI, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 06期

关键词：

D O I：

10.1063/1.1709962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2645 / +

页数：1

共 23 条

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