A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE

被引：26

作者：

CHOU, S

DAVIDSON, LA

GIBBONS, JF

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 01期

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D O I：

10.1063/1.1653237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：23 / &

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