SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON

[1] BACKENSTOSS G, 1957, PHYS REV, V108, P416

[2] BOHM VH, 1959, Z METALLKD, V50, P44

[3] DISTRIBUTION COEFFICIENT OF BORON IN GERMANIUM [J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (04) : 648 - 650

[4] BRIDGERS HE, COMMUNICATION

[5] BUGAY AA, 1957, ZH TEKH FIZ MOSCOW, V27, P1671

[6] BUGAY AA, 1957, ZH TEKH FIZ MOSCOW, V27, P210

[7] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[8] DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .2. EXPERIMENTAL [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) : 1991 - 1996

[9] PROPERTIES OF SILICON DOPED WITH MANGANESE [J]. PHYSICAL REVIEW, 1956, 104 (04): : 937 - 941

[10] DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1390 - 1393

[1] BACKENSTOSS G, 1957, PHYS REV, V108, P416

[2] BOHM VH, 1959, Z METALLKD, V50, P44

[3] DISTRIBUTION COEFFICIENT OF BORON IN GERMANIUM [J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (04) : 648 - 650

[4] BRIDGERS HE, COMMUNICATION

[5] BUGAY AA, 1957, ZH TEKH FIZ MOSCOW, V27, P1671

[6] BUGAY AA, 1957, ZH TEKH FIZ MOSCOW, V27, P210

[7] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[8] DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .2. EXPERIMENTAL [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) : 1991 - 1996

[9] PROPERTIES OF SILICON DOPED WITH MANGANESE [J]. PHYSICAL REVIEW, 1956, 104 (04): : 937 - 941

[10] DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1390 - 1393