PROPERTIES OF SILICON DOPED WITH MANGANESE

[1] BROOKS H, 1955, ADVAN ELECTRON ELECT, V7, P110

[2] COLLINS CB, 1956, B AM PHYS SOC, V1, P127

[3] COLLINS CB, 1956, B AM PHYS SOC 2, V1, P49

[4] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[5] DASH WC, 1955, PHYS REV, V98, P1536

[6] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[7] GALLAGHER CJ, 1955, PHYS REV, V100, P1259

[8] HALL R, COMMUNICATION

[9] TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 100 (02): : 606 - 615

[10] HODGKINSON RJ, 1955, PHILOS MAG, V46, P410

[1] BROOKS H, 1955, ADVAN ELECTRON ELECT, V7, P110

[2] COLLINS CB, 1956, B AM PHYS SOC, V1, P127

[3] COLLINS CB, 1956, B AM PHYS SOC 2, V1, P49

[4] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[5] DASH WC, 1955, PHYS REV, V98, P1536

[6] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[7] GALLAGHER CJ, 1955, PHYS REV, V100, P1259

[8] HALL R, COMMUNICATION

[9] TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 100 (02): : 606 - 615

[10] HODGKINSON RJ, 1955, PHILOS MAG, V46, P410