ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING

被引：208

作者：

MAYER, JW

ERIKSSON, L

PICRAUX, ST

DAVIES, JA

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1968年 / 46卷 / 06期

关键词：

D O I：

10.1139/p68-082

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：663 / &

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