OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE

A study has been made on the properties of Ohmic contacts to single-crystal n-type GaAs wafers which were grown by liquid epitaxy techniques. Carrier concentration profiles at the n+-n junctions were measured by the Schottky barrier capacitance technique for both Au-Ge-Ni alloyed contacts and liquid epitaxial n+ contacts. The frequently observed high resistance layers at the interface were eliminated by the contacting processes described here. The Ohmic contact problems and the results of other experiments are explained in terms of the GaAs binary phase diagram and nonstoichiometry considerations. © 1969 The American Institute of Physics.