HOMOGENEOUS SOLUTION GROWN EPITAXIAL GAAS BY TIN DOPING

被引：19

作者：

HARRIS, JS

SNYDER, WL

机构：

[1] Stanford Electronics Laboratories, Stanford, CA

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 05期

关键词：

D O I：

10.1016/0038-1101(69)90088-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tin doped epitaxial GaAs single crystals were grown from a Ga solution. The C-V characteristics of Schottky barrier diodes were used to determine the electron concentration profiles of the GaAs crystals. These profiles were flat within ± 5 per cent to a depth of 165 μ. The electron concentration was controlled at specified values between 3 × 1014 and 5 × 1016 cm-3. The distribution coefficient of tin in GaAs is 1 × 10-4 between 800 and 850°C. © 1969.

引用

页码：337 / +

页数：1

共 12 条

[1] GALLIUM ARSENITIDE OF HIGH MOBILITY OBTAINED BY EPITAXY IN LIQUID PHASE
ANDRE, E
LEDUC, JM
[J]. MATERIALS RESEARCH BULLETIN, 1968, 3 (01) : 1 - &
[2] BOLGER DE, 1966, P INT S GALLIUM ARSE
[3] BROOKS H, 1956, ADV ELECTRONICS, V7
[4] DAWSON LR, 1968, B AM PHYS SOC, V13, P375
[5] GUNN EFFECT IN POLAR SEMICONDUCTORS
FOYT, AG
MCWHORTER, AL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 79 - +
[6] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION
KANG, CS
GREENE, PE
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (05) : 171 - &
[7] NELSON H, 1963, RCA REV, V24, P603
[8] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS
THOMAS, CO
KAHNG, D
MANZ, RC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061
[9] SOLUBILITY AND ELECTRICAL BEHAVIOR OF GROUP 4 IMPURITIES IN SOLUTION GROWN GALLIUM PHOSPHIDE
TRUMBORE, FA
WHITE, HG
KOWALCHI.M
LUKE, CL
NASH, DL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (12) : 1208 - &
[10] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

← 1 2 →