GUNN EFFECT IN POLAR SEMICONDUCTORS

被引：71

作者：

FOYT, AG

MCWHORTER, AL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 01期

关键词：

D O I：

10.1109/T-ED.1966.15638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：79 / +

页数：1

共 22 条

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