HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS

[1] INTERVALLEY TRANSFER OF HOT ELECTRONS IN GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1965, 17 (03): : 216 - &

[2] CONWELL EM, SUBMITTED FOR PUBLIC

[3] DEVEER SM, 1962 P INT C PHYS SE, P358

[4] DOLLING G, 1963 P INT C LATT DY, P19

[5] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[6] DIELECTRIC BREAKDOWN IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 21 - 32

[7] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[8] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) : 658 - &

[9] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290

[10] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &

[1] INTERVALLEY TRANSFER OF HOT ELECTRONS IN GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1965, 17 (03): : 216 - &

[2] CONWELL EM, SUBMITTED FOR PUBLIC

[3] DEVEER SM, 1962 P INT C PHYS SE, P358

[4] DOLLING G, 1963 P INT C LATT DY, P19

[5] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[6] DIELECTRIC BREAKDOWN IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 21 - 32

[7] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[8] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) : 658 - &

[9] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290

[10] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &