GAAS POWER FETS WITH SEMI-INSULATED GATES

被引:13
作者
MACKSEY, HM [1 ]
SHAW, DW [1 ]
WISSEMAN, WR [1 ]
机构
[1] TEXAS INSTR INC,DALLAS,TX 75222
关键词
D O I
10.1049/el:19760149
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:192 / 193
页数:2
相关论文
共 5 条
[1]  
FUKUTA M, 1976, ISSCC DIGEST TECHNIC, P166
[2]   HIGH-EFFICIENCY GAAS MESFET AMPLIFIERS [J].
HUANG, HC ;
DRUKIER, I ;
CAMISA, RL ;
NARAYAN, SY ;
JOLLY, ST .
ELECTRONICS LETTERS, 1975, 11 (21) :508-509
[3]  
MACKSEY H, 1975, 5TH P CORN C ACT SEM, P255
[4]   X-BAND PERFORMANCE OF GAAS POWER FETS [J].
MACKSEY, HM ;
ADAMS, RL ;
MCQUIDDY, DN ;
WISSEMAN, WR .
ELECTRONICS LETTERS, 1976, 12 (02) :54-56
[5]   SEMI-INSULATED GATE GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR [J].
PRUNIAUX, BR ;
NORTH, JC ;
PAYER, AV .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :672-&