SEMI-INSULATED GATE GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR

被引：25

作者：

PRUNIAUX, BR

NORTH, JC

PAYER, AV

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 05期

关键词：

D O I：

10.1109/T-ED.1972.17472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：672 / &

共 11 条

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[2]

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[5] HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

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ELECTRONICS LETTERS, 1970, 6 (08) :228-+

[6]

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[7] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].

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SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[8]

HOWER PL, 1968, 2ND P INT S GAAS REL, P187

[9]

KAWAMURA N, 1970, OCT INT EL DEV M WAS

[10] SILICON AND GALLIUM ARSENIDE FIELD-EFFECT TRANSISTORS WITH SCHOTTKY-BARRIER GATE [J].

STATZ, H ;

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SOLID-STATE ELECTRONICS, 1969, 12 (02) :111-&

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