ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT

被引：129

作者：

FOYT, AG

LINDLEY, WT

WOLFE, CM

DONNELLY, JP

机构：

[1] Lincoln Laboratory Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 04期

关键词：

D O I：

10.1016/0038-1101(69)90001-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton bombardment has been used to convert both p- and n-type GaAs into high resistivity material. It will be shown that this technique is useful for isolating junction devices and fabricating arrays. The average carrier concentration in the bombarded layer is less than 1011/cm3, and the layer thickness is about one micron for every 100 keV of proton energy. These layers are apparently unaffected by a 16 hr anneal at 300°, and only slightly affected at 400°. Using this technique, we have isolated islands of n-type GaAs on a semi-insulating substrate, separated p-n junctions on an n-type substrate, and suppressed edge breakdown in Au-GaAs Schottky barrier diodes. © 1969.

引用

页码：209 / &