SILICON AND GALLIUM ARSENIDE FIELD-EFFECT TRANSISTORS WITH SCHOTTKY-BARRIER GATE

被引：12

作者：

STATZ, H

VONMUNCH, W

机构：

[1] IBM Research Division, Zurich

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 02期

关键词：

D O I：

10.1016/0038-1101(69)90119-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Field-effect transistors with Schottky-barrier gates have been produced using epitaxial layers of n-type silicon on p-type substrates, and n-type gallium arsenide on semi-insulating substrates. Some simple design considerations are presented and the fabrication processes are discussed in detail. Comparisons are made between two different device geometries and between silicon and gallium arsenide devices. © 1969.

引用

页码：111 / &

共 12 条

[1] BOCKEMUEHL RR, 1963, IEEE T, VED10, P63
[2] THE FIELD EFFECT TRANSISTOR
DACEY, GC
ROSS, IM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06): : 1149 - 1189
[3] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
HOFSTEIN, SR
HEIMAN, FP
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &
[4] AN EPITAXIAL GAAS FIELD-EFFECT TRANSISTOR
HOOPER, WW
LEHRER, WI
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1237 - &
[5] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER
KAHNG, D
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 281 - 295
[6] KRESSEL H, 1962, P IRE, V50, P2493
[7] SCHOTTKY BARRIER GATE FIELD EFFECT TRANSISTOR
MEAD, CA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02): : 307 - &
[8] PHILIPS AB, 1962, TRANSISTOR ENGINEERI, P136
[9] A UNIPOLAR FIELD-EFFECT TRANSISTOR
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376
[10] STATZ H, 1967, VERHANDL DPG, V2, P60

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