INP-LANGMUIR-FILM MIS STRUCTURES

被引：40

作者：

ROBERTS, GG

PANDE, KP

BARLOW, WA

机构：

[1] UNIV DURHAM,DEPT APPL PHYS & ELECTR,DURHAM DH1 3LE,ENGLAND

[2] ICI LTD,CORP LAB,RUNCORN,CHESHIRE,ENGLAND

来源：

关键词：

D O I：

10.1049/el:19770415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：581 / 583

页数：3

共 10 条

[1] MEASUREMENT OF CARRIER-CONCENTRATION PROFILES IN EPITAXIAL INDIUM PHOSPHIDE
CARDWELL, MJ
PEART, RF
[J]. ELECTRONICS LETTERS, 1973, 9 (04) : 88 - 89
[2] PREPARATION OF HIGH PURITY EPITAXIAL INF
CLARKE, RC
JOYCE, BD
WILGOSS, WHE
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1125 - &
[3] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
[4] AN INP MIS DIODE
LILE, DL
COLLINS, DA
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 554 - 556
[5] INP-SIO2 MIS STRUCTURE
MESSICK, L
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4949 - 4951
[6] ELECTRICAL-PROPERTIES OF N-TYPE SEMI-INSULATING INDIUM-PHOSPHIDE
PANDE, KP
ROBERTS, GG
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (15): : 2899 - 2904
[7] ELECTRICAL CHARACTERISTICS OF AU-TI-(N-TYPE)INP SCHOTTKY DIODES
ROBERTS, GG
PANDE, KP
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) : 1323 - 1328
[8] STUDY OF METAL-ORGANIC MONOLAYER-SEMICONDUCTOR STRUCTURES
TANGUY, J
[J]. THIN SOLID FILMS, 1972, 13 (01) : 33 - &
[9] Wilmsen C. W., 1975, Critical Reviews in Solid State Sciences, V5, P313, DOI 10.1080/10408437508243489
[10] [No title captured]