STUDY OF METAL-ORGANIC MONOLAYER-SEMICONDUCTOR STRUCTURES

[1] BARRAUD A, 1971, COLLOQUE AVISEM VERS

[2] Built-up films of barium stearate and their optical properties [J]. PHYSICAL REVIEW, 1937, 51 (11): : 0964 - 0982

[3] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &

[4] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 865 - &

[5] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +

[6] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[7] HANDY RW, 1966, J ELECTROCHEM SOC, V113

[8] HEIMAN FP, 1965, IEEE T ELECTRON DEVI, VED12, P167

[9] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[10] HORIUCHI S, 1968, J ELECTROCHEM SOC, V115, P635

[1] BARRAUD A, 1971, COLLOQUE AVISEM VERS

[2] Built-up films of barium stearate and their optical properties [J]. PHYSICAL REVIEW, 1937, 51 (11): : 0964 - 0982

[3] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &

[4] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 865 - &

[5] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +

[6] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[7] HANDY RW, 1966, J ELECTROCHEM SOC, V113

[8] HEIMAN FP, 1965, IEEE T ELECTRON DEVI, VED12, P167

[9] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[10] HORIUCHI S, 1968, J ELECTROCHEM SOC, V115, P635