TUNNELING IN METAL-OXIDE-SILICON STRUCTURES

[1] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (02) : 57 - &

[2] ELECTRON TUNNELING FROM METAL TO INSB - (SEMICONDUCTOR BAND STRUCTURE - 4.2 DEGREES - MOS STRUCTURES - SINGLE CRYSTALS - E/T) [J]. APPLIED PHYSICS LETTERS, 1966, 9 (01) : 21 - &

[3] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[5] CROWELL CR, 1965, J APPL PHYS, V36, P3343

[6] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[7] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (24) : 1108 - &

[8] GOETZBER.A, 1966, ARCH ELEKTR UBERTRAG, V20, P241

[9] IMPROVED PROPERTIES OF SILICON DIOXIDE LAYERS GROWN UNDER BIAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 138 - +

[10] GRAY PV, 1965, PHYS REV A, V140, P5207

[1] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (02) : 57 - &

[2] ELECTRON TUNNELING FROM METAL TO INSB - (SEMICONDUCTOR BAND STRUCTURE - 4.2 DEGREES - MOS STRUCTURES - SINGLE CRYSTALS - E/T) [J]. APPLIED PHYSICS LETTERS, 1966, 9 (01) : 21 - &

[3] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[5] CROWELL CR, 1965, J APPL PHYS, V36, P3343

[6] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[7] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (24) : 1108 - &

[8] GOETZBER.A, 1966, ARCH ELEKTR UBERTRAG, V20, P241

[9] IMPROVED PROPERTIES OF SILICON DIOXIDE LAYERS GROWN UNDER BIAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 138 - +

[10] GRAY PV, 1965, PHYS REV A, V140, P5207