ELECTRON TUNNELING FROM METAL TO INSB - (SEMICONDUCTOR BAND STRUCTURE - 4.2 DEGREES - MOS STRUCTURES - SINGLE CRYSTALS - E/T)

被引：15

作者：

CHANG, LL

ESAKI, L

JONA, F

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来源：

APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 01期

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D O I：

10.1063/1.1754581

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：21 / &

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[1] COHEN M, IN PRESS
[2] THE KINETICS AND MECHANISM OF FORMATION OF ANODE FILMS ON SINGLE-CRYSTAL INSB
DEWALD, JF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 244 - 251
[3] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS
EHRENREICH, H
PHILLIPS, JC
PHILIPP, HR
[J]. PHYSICAL REVIEW LETTERS, 1962, 8 (02) : 59 - &
[4] STUDY OF ELECTRONIC BAND STRUCTURES BY TUNNELING SPECTROSCOPY - BISMUTH
ESAKI, L
STILES, PJ
[J]. PHYSICAL REVIEW LETTERS, 1965, 14 (22) : 902 - &
[5] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING
ESAKI, L
STILES, PJ
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (24) : 1108 - &
[6] EFFECT OF BAND STRUCTURE ON TUNNELING CURRENTS
GOLDBERG, N
POLLACK, SR
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 446 - &
[7] BAND STRUCTURE OF INTERMETALLIC SEMICONDUCTORS FROM PRESSURE EXPERIMENTS
PAUL, W
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2082 - &
[8] THE OXIDATION OF INTERMETALLIC COMPOUNDS .1. HIGH TEMPERATURE OXIDATION OF INSB
ROSENBERG, AJ
LAVINE, MC
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1960, 64 (09) : 1135 - 1142
[9] THE ENERGY-DEPENDENCE OF ELECTRON MASS IN INDIUM ANTIMONIDE DETERMINED FROM MEASUREMENTS OF THE INFRARED FARADAY EFFECT
SMITH, SD
MOSS, TS
TAYLOR, KW
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (1-2) : 131 - 139
[10] OPTICAL PROPERTIES OF INDIUM OXIDE
WEIHER, RL
LEY, RP
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 299 - &