INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND

被引：58

作者：

FRITZSCHE, D

机构：

来源：

关键词：

D O I：

10.1049/el:19780037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：51 / 52

页数：2

共 7 条

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BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[2] AN INP MIS DIODE
LILE, DL
COLLINS, DA
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 554 - 556
[3] INP-SIO2 MIS STRUCTURE
MESSICK, L
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4949 - 4951
[4] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[5] INP-LANGMUIR-FILM MIS STRUCTURES
ROBERTS, GG
PANDE, KP
BARLOW, WA
[J]. ELECTRONICS LETTERS, 1977, 13 (19) : 581 - 583
[6] SZE SM, 1969, PHYSICS SEMICONDUCTO, P429
[7] Wilmsen C. W., 1975, Critical Reviews in Solid State Sciences, V5, P313, DOI 10.1080/10408437508243489