N-CHANNEL INVERSION-MODE INP MISFET

[1] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J]. ELECTRONICS LETTERS, 1976, 12 (02) : 53 - 54

[2] GALLIUM ARSENIDE MOS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 813 - &

[3] ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 578 - 581

[4] GAAS INVERSION-TYPE MIS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759

[5] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330

[6] LILE DL, UNPUBLISHED

[7] INP-SIO2 MIS STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4949 - 4951

[8] MICROWAVE INP-SIO2 MISFET [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 494 - 495

[9] MESSICK L, UNPUBLISHED

[10] GAAS MICROWAVE MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 573 - 579

[1] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J]. ELECTRONICS LETTERS, 1976, 12 (02) : 53 - 54

[2] GALLIUM ARSENIDE MOS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 813 - &

[3] ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 578 - 581

[4] GAAS INVERSION-TYPE MIS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759

[5] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330

[6] LILE DL, UNPUBLISHED

[7] INP-SIO2 MIS STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4949 - 4951

[8] MICROWAVE INP-SIO2 MISFET [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 494 - 495

[9] MESSICK L, UNPUBLISHED

[10] GAAS MICROWAVE MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 573 - 579