GAAS MICROWAVE MOSFETS

[1] BECKE HW, 1967, ELECTRONICS, P82

[2] PLASMA OXIDATION OF GAAS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58

[3] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[4] EQUIVALENT CIRCUIT AND GAIN OF MOS FIELD EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 71 - +

[5] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2458 - &

[6] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569

[7] VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 528 - 531

[8] ENHANCEMENT-MODE GAAS MOSFET ON SEMI-INSULATING SUBSTRATE USING A SELF-ALIGNED GATE TECHNIQUE [J]. ELECTRONICS LETTERS, 1977, 13 (03) : 73 - 74

[9] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330

[10] DEPLETION-MODE GAAS MOS FET [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 207 - 208

[1] BECKE HW, 1967, ELECTRONICS, P82

[2] PLASMA OXIDATION OF GAAS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58

[3] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[4] EQUIVALENT CIRCUIT AND GAIN OF MOS FIELD EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 71 - +

[5] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2458 - &

[6] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569

[7] VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 528 - 531

[8] ENHANCEMENT-MODE GAAS MOSFET ON SEMI-INSULATING SUBSTRATE USING A SELF-ALIGNED GATE TECHNIQUE [J]. ELECTRONICS LETTERS, 1977, 13 (03) : 73 - 74

[9] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330

[10] DEPLETION-MODE GAAS MOS FET [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 207 - 208