BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS

被引：71

作者：

ENGELMANN, RWH ^{[1
]}

LIECHTI, CA ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 11期

关键词：

D O I：

10.1109/T-ED.1977.19000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1288 / 1296

页数：9

相关论文

共 29 条

[1] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
BARRERA, JS
ARCHER, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1023 - 1030
[2] DECKER DR, 1975, 5TH P BIENN EL ENG C, P305
[3] DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
DRANGEID, KE
SOMMERHA.R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 82 - &
[4] Engelmann R. W. H., 1976, International Electron Devices Meeting. (Technical digest), P351
[5] ENGELMANN RWH, 1976, ECOM751300F HEWL PAC
[6] ENGELMANN RWH, 1975, ECOM7513001 HEWL PAC
[7] HIGH-FIELD TRANSPORT IN GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE
FAWCETT, W
HERBERT, DC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (09): : 1641 - 1654
[8] 2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS
HIMSWORTH, B
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1353 - +
[9] 2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS
HOCKNEY, RW
WARRINER, RA
REISER, M
[J]. ELECTRONICS LETTERS, 1974, 10 (23) : 484 - 486
[10] SATURATION VELOCITY OF ELECTRONS IN GAAS
HOUSTON, PA
EVANS, AGR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) : 584 - 586