2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS

被引：44

作者：

HIMSWORTH, B

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 12期

关键词：

D O I：

10.1016/0038-1101(72)90129-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1353 / +

页数：1

共 11 条

[1]

ALLEN DMD, 1954, RELAXATION METHODS

[2] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].

BUTCHER, PN ;

FAWCETT, W .

PHYSICS LETTERS, 1966, 21 (05) :489-&

[3]

HARTNAGEL H, 1969, SEMICONDUCTOR PLASMA

[4] CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS [J].

HAUSER, JR .

SOLID-STATE ELECTRONICS, 1967, 10 (06) :577-&

[5] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J].

KENNEDY, DP ;

OBRIEN, RR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :95-&

[6] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

MCCUMBER, DE ;

CHYNOWETH, AG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+

[7] MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE [J].

RUCH, JG ;

KINO, GS .

APPLIED PHYSICS LETTERS, 1967, 10 (02) :40-&

[8] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[10]

TURNER JA, 1968, 2 P INT GALL ARS S, P195

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