CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS

被引：60

作者：

HAUSER, JR

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(67)90139-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：577 / &

共 7 条

[1] DACEY GC, 1963, P I RADIO ENGRS, V41, P970
[2] DC CHARACTERISTICS OF JUNCTION GATE FIELD-EFFECT TRANSISTORS
HALLADAY, HE
VANDERZI.A
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (06) : 531 - &
[3] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS
RYDER, EJ
[J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769
[4] A UNIPOLAR FIELD-EFFECT TRANSISTOR
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376
[5] WEGNER HAR, 1959, IRE T ELECTRON DEV, V6, P442
[6] CURRENT SATURATION IN SILICON MULTICHANNEL FIELD-EFFECT TRANSISTORS
ZULEEG, R
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2111 - &
[7] MULTICHANNEL FIELD-EFFECT TRANSISTOR
ZULEEG, R
HINKLE, VO
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (10) : 1245 - &