THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS

被引：316

作者：

MCCUMBER, DE

CHYNOWETH, AG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 01期

关键词：

D O I：

10.1109/T-ED.1966.15629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4 / +

页数：1

共 25 条

[1] MICROWAVE OSCILLATIONS IN GAASXP1-X ALLOYS (PULSED DC EXCITATION - E/T) [J].

ALLEN, JW ;

SHYAM, M ;

CHEN, YS ;

PEARSON, GL .

APPLIED PHYSICS LETTERS, 1965, 7 (04) :78-&

[2]

BARBER MR, PRIVATE COMMUNICATIO

[3]

BRYANT CA, 1964, B AM PHYS SOC, V9, P63

[4] INTERVALLEY TRANSFER OF HOT ELECTRONS IN GALLIUM ARSENIDE [J].

BUTCHER, PN ;

FAWCETT, W .

PHYSICS LETTERS, 1965, 17 (03) :216-&

[5]

CHYNOWETH AG, TO BE PUBLISHED

[6] ELECTROSTATIC DOMAINS IN 2-VALLEY SEMICONDUCTORS [J].

COPELAND, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :189-+

[7]

DAY GF, 1965, B AM PHYS SOC, V10, P383

[8] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].

GUNN, JB .

SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91

[9] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&

[10]

GUNN JB, 1965, PLASMA EFFECTS SOLID, P199

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