ELECTROSTATIC DOMAINS IN 2-VALLEY SEMICONDUCTORS

被引：31

作者：

COPELAND, JA

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1966.15656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：189 / +

页数：1

共 5 条

[1] GUNN JB, 1965, PLASMA EFFECTS SOLID, P199
[2] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS
HILSUM, C
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &
[3] THEORY OF GUNN EFFECT
KROEMER, H
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1736 - &
[4] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
MCCUMBER, DE
CHYNOWETH, AG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 4 - +
[5] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS
RIDLEY, BK
WATKINS, TB
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &