VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE

被引：38

作者：

IHARA, M ^{[1
]}

DAZAI, K ^{[1
]}

RYUZAN, O ^{[1
]}

机构：

[1] FUJITSU LABS LTD, KAWASAKI, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 02期

关键词：

D O I：

10.1063/1.1663277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：528 / 531

页数：4

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[1] SHALLOW ACCEPTOR LUMINESCENCE IN GAAS GROWN BY LIQUID-PHASE EPITAXY
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[10] RESIDUAL IMPURITIES IN HIGH-PURITY EPITAXIAL GAAS
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