RESIDUAL IMPURITIES IN HIGH-PURITY EPITAXIAL GAAS

被引：43

作者：

WOLFE, DM

STILLMAN, GE

OWENS, EB

机构：

来源：

关键词：

D O I：

10.1149/1.2407418

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：129 / &

共 12 条

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[4] MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P223
[5] PREPARATION AND PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE
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[6] About a new Mass Spectrograph
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[7] OWENS EB, 1962, APPL SPECTROSC, V16, P148
[8] SPENKE E, 1969, MAY NEW YORK M SOC
[9] MAGNETOSPECTROSCOPY OF SHALLOW DONORS IN GAAS
STILLMAN, GE
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[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (13) : 921 - &
[10] SHALLOW DONOR LEVELS AND HIGH MOBILITY IN EPITAXIAL GALLIUM ARSENIDE
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BOLGER, DE
[J]. SOLID STATE COMMUNICATIONS, 1966, 4 (04) : 181 - &