PREPARATION AND PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE

被引：38

作者：

MARUYAMA, M

KIKUCHI, S

MIZUNO, O

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 03期

关键词：

D O I：

10.1149/1.2411862

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：413 / &

共 11 条

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[8] MOBILITY OF ELECTRONS AND HOLES IN THE POLAR CRYSTAL, PBS [J].

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[9]

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[10] SHALLOW DONOR LEVELS AND HIGH MOBILITY IN EPITAXIAL GALLIUM ARSENIDE [J].

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