PLASMA OXIDATION OF GAAS

被引：97

作者：

CHANG, RPH ^{[1
]}

SINHA, AK ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 01期

关键词：

D O I：

10.1063/1.88872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：56 / 58

页数：3

共 11 条

[1] LOWER-HYBRID BEAM-PLASMA INSTABILITY [J].

CHANG, RPH .

PHYSICAL REVIEW LETTERS, 1975, 35 (05) :285-288

[2] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J].

HASEGAWA, H ;

FORWARD, KE ;

HARTNAGEL, HL .

APPLIED PHYSICS LETTERS, 1975, 26 (10) :567-569

[3] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES [J].

LIGENZA, JR .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2703-+

[4] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION [J].

LOGAN, RA ;

SCHWARTZ, B ;

SUNDBURG, WJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1385-1390

[5] THERMAL OXIDATION OF GAAS [J].

MURARKA, SP .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :180-181

[6]

REVESZ AG, 1963, J AM CERAM SOC, V16, P606

[7] MOS (SI-GATE) COMPATIBILITY OF RF DIODE AND TRIODE SPUTTERING PROCESSES [J].

SINHA, AK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) :65-71

[8]

SINHA AK, UNPUBLISHED

[9] OXIDATION OF GAAS1-XPX SURFACE BY OXYGEN PLASMA AND PROPERTIES OF OXIDE FILM [J].

SUGANO, T ;

MORI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) :113-118

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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