MOS (SI-GATE) COMPATIBILITY OF RF DIODE AND TRIODE SPUTTERING PROCESSES

被引：13

作者：

SINHA, AK ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 01期

关键词：

D O I：

10.1149/1.2132768

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：65 / 71

页数：7

共 17 条

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