EQUIVALENT CIRCUIT AND GAIN OF MOS FIELD EFFECT TRANSISTORS

[1] BECHTEL GN, 1963, 16121 TECHN REP

[2] LINVILL JG, 1961, TRANSISTORS ACTIVE C, pCH10

[3] DESIGN CALCULATIONS FOR MOS FIELD EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (06) : 294 - &

[4] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[5] SMALL-SIGNAL HIGH-FREQUENCY THEORY OF FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (04) : 128 - +

[6] METAL-OXIDE-SEMICONDUCTOR (MOS) SMALL SIGNAL EQUIVALENT CIRCUIT [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03): : 314 - &

[1] BECHTEL GN, 1963, 16121 TECHN REP

[2] LINVILL JG, 1961, TRANSISTORS ACTIVE C, pCH10

[3] DESIGN CALCULATIONS FOR MOS FIELD EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (06) : 294 - &

[4] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[5] SMALL-SIGNAL HIGH-FREQUENCY THEORY OF FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (04) : 128 - +

[6] METAL-OXIDE-SEMICONDUCTOR (MOS) SMALL SIGNAL EQUIVALENT CIRCUIT [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03): : 314 - &