CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

[1] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J]. PHYSICAL REVIEW, 1948, 74 (02): : 230 - 231

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[3] RESEARCH LEADING TO POINT-CONTACT TRANSISTOR [J]. SCIENCE, 1957, 126 (3264) : 105 - 113

[4] BORKAN H, 1963, RCA REV, V24, P153

[5] INVENTION OF THE SOLID-STATE AMPLIFIER [J]. PHYSICS TODAY, 1964, 17 (02) : 24 - 26

[6] BRATTAIN WH, 1953, AT&T TECH J, V32, P1

[7] THE FIELD EFFECT TRANSISTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06): : 1149 - 1189

[8] EFFECTS OF SPACE-CHARGE LAYER WIDENING IN JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1401 - 1406

[9] SOME EFFECTS OF MATERIAL PARAMETERS ON THE DESIGN OF SURFACE SPACE-CHARGE VARACTORS [J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 71 - 76

[10] NONLOCAL TRANSPORT AND CUSPIDAL SURFACE MOBILITY IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 131 (02): : 592 - &

[1] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J]. PHYSICAL REVIEW, 1948, 74 (02): : 230 - 231

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[3] RESEARCH LEADING TO POINT-CONTACT TRANSISTOR [J]. SCIENCE, 1957, 126 (3264) : 105 - 113

[4] BORKAN H, 1963, RCA REV, V24, P153

[5] INVENTION OF THE SOLID-STATE AMPLIFIER [J]. PHYSICS TODAY, 1964, 17 (02) : 24 - 26

[6] BRATTAIN WH, 1953, AT&T TECH J, V32, P1

[7] THE FIELD EFFECT TRANSISTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06): : 1149 - 1189

[8] EFFECTS OF SPACE-CHARGE LAYER WIDENING IN JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1401 - 1406

[9] SOME EFFECTS OF MATERIAL PARAMETERS ON THE DESIGN OF SURFACE SPACE-CHARGE VARACTORS [J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 71 - 76

[10] NONLOCAL TRANSPORT AND CUSPIDAL SURFACE MOBILITY IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 131 (02): : 592 - &