ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

[1] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1023 - 1030

[2] DIETRICH HB, 1977, S P THIN FILM PHENOM

[3] DONNELLY JP, 1977, APPL PHYS LETT, V31, P419

[4] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[5] GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] HENRY RL, 1977, GALLIUM ARSENIDE REL, P28

[7] EFFECT OF IONIZED IMPURITY SCATTERING ON ELECTRON TRANSIT-TIME IN GAAS AND INP FETS [J]. ELECTRONICS LETTERS, 1977, 13 (08) : 235 - 236

[8] HOOPER WW, 1977, IEEE INT ELECTRON DE, P601

[9] LEE RN, 1977, MATER RES BULL, V12, P651, DOI 10.1016/0025-5408(77)90075-7

[10] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) : 519 - 519

[1] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1023 - 1030

[2] DIETRICH HB, 1977, S P THIN FILM PHENOM

[3] DONNELLY JP, 1977, APPL PHYS LETT, V31, P419

[4] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[5] GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] HENRY RL, 1977, GALLIUM ARSENIDE REL, P28

[7] EFFECT OF IONIZED IMPURITY SCATTERING ON ELECTRON TRANSIT-TIME IN GAAS AND INP FETS [J]. ELECTRONICS LETTERS, 1977, 13 (08) : 235 - 236

[8] HOOPER WW, 1977, IEEE INT ELECTRON DE, P601

[9] LEE RN, 1977, MATER RES BULL, V12, P651, DOI 10.1016/0025-5408(77)90075-7

[10] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) : 519 - 519