EFFECT OF IONIZED IMPURITY SCATTERING ON ELECTRON TRANSIT-TIME IN GAAS AND INP FETS

被引：26

作者：

HILL, G

ROBSON, PN

MAJERFELD, A

FAWCETT, W

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND

[2] ROYAL SIGNALS & RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1049/el:19770171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：235 / 236

页数：2

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