A CHEMICAL BONDING MODEL FOR THE NATIVE OXIDES OF THE III-V COMPOUND SEMICONDUCTORS

被引:57
作者
LUCOVSKY, G
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
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D O I
10.1116/1.571038
中图分类号
O59 [应用物理学];
学科分类号
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页码:456 / 462
页数:7
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共 38 条
[1]   OPTICAL-PROPERTIES OF ANODICALLY GROWN NATIVE OXIDES ON SOME GA-V COMPOUNDS FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
SCHWARTZ, B ;
STUDNA, AA ;
DERICK, L ;
KOSZI, LA .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3510-3513
[2]  
ASPNES DE, 1980, P INT TOPICAL C PHYS, P197
[3]  
BAGLEE DA, 1980, PHYSICS MOS INSULATO, P191
[4]   RECONSTRUCTION AND OXIDATION OF THE GAAS(110) SURFACE [J].
BARTON, JJ ;
GODDARD, WA ;
MCGILL, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1178-1185
[5]   OXYGEN INTERACTION WITH GAAS-SURFACES - XPS-UPS STUDY [J].
BRUNDLE, CR ;
SEYBOLD, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1186-1190
[6]  
BRVAR A, UNPUBLISHED
[7]   OXIDATION OF ORDERED AND DISORDERED GAAS(110) [J].
CHYE, PW ;
SU, CY ;
LINDAU, I ;
SKEATH, P ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1191-1194
[8]  
COTTON FA, 1972, ADV INORGANIC CHEM, pCH9
[9]   DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING [J].
FARROW, RL ;
CHANG, RK ;
MROCZKOWSKI, S ;
POLLAK, FH .
APPLIED PHYSICS LETTERS, 1977, 31 (11) :768-770
[10]   LONGITUDINAL OPTICAL VIBRATIONS IN GLASSES - GEO2 AND SIO2 [J].
GALEENER, FL ;
LUCOVSKY, G .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1474-1478