ELECTRICAL-PROPERTIES OF SILICON-IMPLANTED FURNACE-ANNEALED SILICON-ON-SAPPHIRE DEVICES

被引：30

作者：

ROULET, ME ^{[1
]}

SCHWOB, P ^{[1
]}

GOLECKI, I ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 17期

关键词：

Bipolar transistors; Metal-oxide-semiconductor field-effect transistors; semiconductor diodes; Semiconductor epitaxial layers;

D O I：

10.1049/el:19790380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The crystalline quality of s.o.s. layers can be improved near the silicon-sapphire interface by silicon implantation followed by recrystallisation. Device performance on such layers is markedly improved as to n-channel m.o.s.t. noise and leakage current, reverse diode current and lateral bipolar transistor gain. Minority-carrier lifetimes up to 50 ns are deduced. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：527 / 529

页数：3

共 6 条

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DUMIN, DJ
SILVER, RS
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KALBITZER, S
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[5] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUES
LAU, SS
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GYULAI, J
ROTH, J
SIGMON, TW
CASS, T
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 76 - 78
[6] HYDROGEN CHLORIDE AND CHLORINE GETTERING - EFFECTIVE TECHNIQUE FOR IMPROVING PERFORMANCE OF SILICON DEVICES
RONEN, RS
ROBINSON, PH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 747 - +

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