ANNEALING BEHAVIOR OF RADIATION DAMAGES IN METAL-SILICIDES

被引:7
作者
HIKOSAKA, K [1 ]
ISHIWARA, H [1 ]
FURUKAWA, S [1 ]
机构
[1] TOKYO INST TECHNOL,GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 51卷 / 3-4期
关键词
D O I
10.1080/00337578008210009
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
收藏
页码:253 / 256
页数:4
相关论文
共 4 条
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  • [2] CHANNELED ION-IMPLANTATION THROUGH METALLIC-FILMS
    HIKOSAKA, K
    ISHIWARA, H
    FURUKAWA, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1913 - 1916
  • [3] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES
    ISHIWARA, H
    HIKOSAKA, K
    FURUKAWA, S
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 23 - 24
  • [4] ISHIWARA H, 1979, P S THIN FILM INTERF