CHANNELED ION-IMPLANTATION THROUGH METALLIC-FILMS

[1] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 711 - 717

[2] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 23 - 24

[3] CHANNELING ION-IMPLANTATION THROUGH PALLADIUM FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1374 - 1377

[4] ISHIWARA K, 1979, J APPL PHYS, V50, P5302

[5] Lindhard J., 1965, KGL DANSKE VIDENSKAB, V34

[6] SIGURD D, 1973, THIN SOLID FILMS, V19, P319, DOI 10.1016/0040-6090(73)90068-0

[7] Tu K.N., 1974, J APPL PHYS S, V2, P669

[1] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 711 - 717

[2] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 23 - 24

[3] CHANNELING ION-IMPLANTATION THROUGH PALLADIUM FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1374 - 1377

[4] ISHIWARA K, 1979, J APPL PHYS, V50, P5302

[5] Lindhard J., 1965, KGL DANSKE VIDENSKAB, V34

[6] SIGURD D, 1973, THIN SOLID FILMS, V19, P319, DOI 10.1016/0040-6090(73)90068-0

[7] Tu K.N., 1974, J APPL PHYS S, V2, P669