CHANNELING ION-IMPLANTATION THROUGH PALLADIUM FILMS

被引：3

作者：

ISHIWARA, H ^{[1
]}

FURUKAWA, S ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,FAC ENGN,DEPT PHYS ELECTR,MEGUROKU 152,TOKYO,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.568545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1374 / 1377

页数：4

共 9 条

[1]

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[2] RANGE DISTRIBUTION THEORY BASED ON ENERGY-DISTRIBUTION OF IMPLANTED IONS [J].

FURUKAWA, S ;

ISHIWARA, H .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1268-&

[3]

ISHIWARA H, 1974, 4TH P INT C ION IMPL

[4] ALLOYING OF THIN PALLADIUM FILMS WITH SINGLE-CRYSTAL AND AMORPHOUS SILICON [J].

LEE, DH ;

HART, RR ;

KIEWIT, DA ;

MARSH, OJ .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02) :645-651

[5] EFFECTS OF AL FILMS ON ION-IMPLANTED SI [J].

LEE, DH ;

HART, RR ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1972, 20 (02) :73-&

[6]

LINDHARD J, 1965, K DANSKE VIDENSK SEL, V34

[7] CHANNELING STUDIES IN DIAMOND-TYPE LATTICES [J].

PICRAUX, ST ;

DAVIES, JA ;

ERIKSSON, L ;

JOHANSSON, NG ;

MAYER, JW .

PHYSICAL REVIEW, 1969, 180 (03) :873-+

[8] INCREASING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION [J].

SHANNON, JM .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :75-77

[9]

SIGURD D, 1973, THIN SOLID FILMS, V19, P319, DOI 10.1016/0040-6090(73)90068-0

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