LATERAL P-N-JUNCTIONS AND QUANTUM WIRES FORMED BY QUASI 2-DIMENSIONAL ELECTRON AND HOLE SYSTEMS AT CORRUGATED GAAS/ALGAAS INTERFACES

We report the results of modeling lateral p-n junctions and p-n-p quantum wire structures at corrugated GaAs/AlGaAs interfaces, using the surface orientation dependent amphoteric nature of Si doping. We determine the potential landscape and the electron and hole charge densities within a semiclassical Thomas-Fermi screening model, and then solve the two-dimensional Schrodinger equation using finite elements for the quantized electron and hole states at the heterointerfaces. We demonstrate the formation of a one-dimensional electron system confined between two lateral p-n junctions, and discuss the advantages of this structure compared to conventional electrostatic confinement schemes for fabricating quantum wires.